Samsung is expected to more than double output of its HBM4 and HBM4E DRAM
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Samsung plans to more than double HBM4 and HBM4E output next year.
Samsung expects to more than double output of its HBM4 and HBM4E memory chips next year. The company plans to increase outsourced glass carrier cleaning volume, essential for wafer thinning in HBM production, 2.5-fold. HBM4 and HBM4E output is projected to at least double, with monthly wafer input rising to about 250,000 from 180,000. The HBM4 family share of Samsung's HBM output is forecast to climb from about 40% this year to roughly 80% next year.
Samsung began mass-production shipments of HBM4 in February and provided 12-layer HBM4E samples to customers including Nvidia in May.
What commenters are saying
Commenters worry the HBM ramp will squeeze consumer DRAM supply, raising prices. They note wafer capacity reallocation to HBM reduces DDR production, and cite a 3:1 conversion ratio from Micron. Some argue long-term market forces will balance supply and demand, while others predict an AI bubble burst leaving memory makers with overcapacity. One commenter references past DRAM price-fixing lawsuits, calling for government intervention.